Siegfried Karg
Siegfried Karg
IBM Research Europe - Zurich
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Polymeric anodes for improved polymer light-emitting diode performance
SA Carter, M Angelopoulos, S Karg, PJ Brock, JC Scott
Applied Physics Letters 70 (16), 2067-2069, 1997
Role of Oxygen Vacancies in Cr‐Doped SrTiO3 for Resistance‐Change Memory
M Janousch, GI Meijer, U Staub, B Delley, SF Karg, BP Andreasson
Advanced materials 19 (17), 2232-2235, 2007
Realization of a silicon nanowire vertical surround‐gate field‐effect transistor
V Schmidt, H Riel, S Senz, S Karg, W Riess, U Gösele
small 2 (1), 85-88, 2006
Ambipolar light-emitting organic field-effect transistor
C Rost, S Karg, W Riess, MA Loi, M Murgia, M Muccini
Applied physics letters 85 (9), 1613-1615, 2004
Encapsulated organic light emitting device
E Haskal, S Karg, JR Salem, JC Scott
US Patent 5,952,778, 1999
Increased brightness and lifetime of polymer light-emitting diodes with polyaniline anodes
S Karg, JC Scott, JR Salem, M Angdopoulos
Synthetic Metals 80 (2), 111-117, 1996
Electrical and optical characterization of poly (phenylene-vinylene) light emitting diodes
S Karg, W Riess, V Dyakonov, M Schwoerer
Synthetic metals 54 (1-3), 427-433, 1993
Mechanisms of injection enhancement in organic light-emitting diodes through an Al/LiF electrode
H Heil, J Steiger, S Karg, M Gastel, H Ortner, H Von Seggern, M Stößel
Journal of Applied Physics 89 (1), 420-424, 2001
Phosphorescent top-emitting organic light-emitting devices with improved light outcoupling
H Riel, S Karg, T Beierlein, B Ruhstaller, W Rieß
Applied Physics Letters 82 (3), 466-468, 2003
Ambipolar organic field-effect transistor based on an organic heterostructure
C Rost, DJ Gundlach, S Karg, W Rieß
Journal of Applied Physics 95 (10), 5782-5787, 2004
Tuning the emission characteristics of top-emitting organic light-emitting devices by means of a dielectric capping layer: An experimental and theoretical study
H Riel, S Karg, T Beierlein, W Rieß, K Neyts
Journal of Applied Physics 94 (8), 5290-5296, 2003
Charge carrier mobility in poly (p-phenylenevinylene) studied by the time-of-flight technique
E Lebedev, T Dittrich, V Petrova-Koch, S Karg, W Brütting
Applied physics letters 71 (18), 2686-2688, 1997
Polymeric anodes for organic light-emitting diodes
JC Scott, SA Carter, S Karg, M Angelopoulos
Synthetic Metals 85 (1-3), 1197-1200, 1997
Light-emitting diodes based on poly-p-phenylene-vinylene: II. Impedance spectroscopy
M Meier, S Karg, W Riess
Journal of Applied Physics 82 (4), 1961-1966, 1997
Preparation of metallic films on elastomeric stamps and their application for contact processing and contact printing
H Schmid, H Wolf, R Allenspach, H Riel, S Karg, B Michel, E Delamarche
Advanced Functional Materials 13 (2), 145-153, 2003
Simulating electronic and optical processes in multilayer organic light-emitting devices
B Ruhstaller, T Beierlein, H Riel, S Karg, JC Scott, W Riess
IEEE Journal of Selected Topics in Quantum Electronics 9 (3), 723-731, 2003
Tuning optoelectronic properties of ambipolar organic light‐emitting transistors using a bulk‐heterojunction approach
MA Loi, C Rost‐Bietsch, M Murgia, S Karg, W Riess, M Muccini
Advanced Functional Materials 16 (1), 41-47, 2006
Tuning the light emission from GaAs nanowires over 290 meV with uniaxial strain
G Signorello, S Karg, MT Björk, B Gotsmann, H Riel
Nano letters 13 (3), 917-924, 2013
Light-emitting diodes based on poly-p-phenylene-vinylene: I. Charge-carrier injection and transport
S Karg, M Meier, W Riess
Journal of applied physics 82 (4), 1951-1960, 1997
Monte Carlo study of picosecond exciton relaxation and dissociation in poly (phenylenevinylene)
M Scheidler, U Lemmer, R Kersting, S Karg, W Riess, B Cleve, RF Mahrt, ...
Physical Review B 54 (8), 5536, 1996
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