| Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing M Nemoz, R Dagher, S Matta, A Michon, P Vennéguès, J Brault Journal of Crystal Growth 461, 10-15, 2017 | 53 | 2017 |
| Graphene integration with nitride semiconductors for high power and high frequency electronics F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, B Pecz, ... physica status solidi (a) 214 (4), 1600460, 2017 | 48 | 2017 |
| Remote epitaxy using graphene enables growth of stress-free GaN T Journot, H Okuno, N Mollard, A Michon, R Dagher, P Gergaud, J Dijon, ... Nanotechnology 30 (50), 505603, 2019 | 42 | 2019 |
| Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors F Giannazzo, G Fisichella, G Greco, E Schilirò, I Deretzis, R Lo Nigro, ... physica status solidi (a) 215 (10), 1700653, 2018 | 16 | 2018 |
| High temperature annealing and CVD growth of few‐layer graphene on bulk AlN and AlN templates R Dagher, S Matta, R Parret, M Paillet, B Jouault, L Nguyen, M Portail, ... physica status solidi (a) 214 (4), 1600436, 2017 | 13 | 2017 |
| A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations R Dagher, E Blanquet, C Chatillon, T Journot, M Portail, L Nguyen, ... CrystEngComm 20 (26), 3702-3710, 2018 | 10 | 2018 |
| Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition F Giannazzo, R Dagher, E Schilirò, SE Panasci, G Greco, G Nicotra, ... Nanotechnology 32 (1), 015705, 2020 | 8 | 2020 |
| Kapitza thermal resistance characterization of epitaxial graphene–SiC (0001) interface G Hamaoui, R Dagher, Y Cordier, A Michon, S Potiron, M Chirtoc, ... Applied Physics Letters 114 (22), 2019 | 6 | 2019 |
| CVD growth of graphene on SiC (0001): Influence of substrate offcut R Dagher, B Jouault, M Paillet, M Bayle, L Nguyen, M Portail, M Zielinski, ... Materials Science Forum 897, 731-734, 2017 | 5 | 2017 |
| Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density R Dagher, P de Mierry, B Alloing, V Brändli, M Portail, B Damilano, ... Journal of Crystal Growth 526, 125235, 2019 | 4 | 2019 |
| Al5+αSi5+δN12, a new Nitride compound R Dagher, L Lymperakis, V Delaye, L Largeau, A Michon, J Brault, ... Scientific Reports 9 (1), 15907, 2019 | 4 | 2019 |
| Hot electron transistors with graphene base for THz electronics F Giannazzo, G Greco, F Roccaforte, R Dagher, A Michon, Y Cordier Low Power Semiconductor Devices and Processes for Emerging Applications in …, 2018 | 3 | 2018 |
| Direct growth of graphene by chemical vapor deposition on silicon carbide and III-nitrides R Dagher Université Côte d'Azur, 2017 | 2 | 2017 |
| Structural identification of graphene films and nanoislands on 6H-SiC (0001) by direct height measurement H Ichou, M Alchaar, B Baris, A Michon, R Dagher, E Dujardin, D Martrou Nanotechnology 34 (16), 165703, 2023 | 1 | 2023 |
| Method for producing nitride mesas each intended to form an electronic or optoelectronic device G Feuillet, B Alloing, H Bono, R Dagher, JZ PEREZ, M Charles, J Buckley, ... US Patent App. 17/620,484, 2022 | 1 | 2022 |
| Quantum hall resistance standard in graphene grown by cvd on sic: state-of-the-art of the experimental mastery J Brun-Picard, R Dagher, D Mailly, A Nachawaty, B Jouault, A Michon, ... 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018), 1-2, 2018 | 1 | 2018 |
| Method for producing iii-n material-based vertical components G Feuillet, T Bouchet, M Charles, R Dagher, JZ PEREZ US Patent App. 18/258,784, 2024 | | 2024 |
| Method for producing a nitride layer M Charles, G Feuillet, R Dagher US Patent App. 17/645,516, 2022 | | 2022 |
| Structural investigation of Si quantum dots grown by CVD on AlN/Si (111) and 3C-SiC/Si (100) epilayers R Dagher, R Khazaka, S Vézian, M Teissiere, A Michon, M Zielinski, ... Materials Science Forum 821, 1003-1006, 2015 | | 2015 |
