| Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices S Lee, I Kim, S Ha, C Yu, J Noh, S Pae, J Park 2015 IEEE International Reliability Physics Symposium, 4B. 1.1-4B. 1.4, 2015 | 86 | 2015 |
| Study of neutron soft error rate (SER) sensitivity: Investigation of upset mechanisms by comparative simulation of FinFET and planar MOSFET SRAMs J Noh, V Correas, S Lee, J Jeon, I Nofal, J Cerba, H Belhaddad, ... IEEE Transactions on Nuclear Science 62 (4), 1642-1649, 2015 | 60 | 2015 |
| Reliability Characterization of 10nm FinFET Technology with multi-VT Gate Stack for Low Power and High Performance MJ Jin, C Liu, J Kim, J Kim, H Shim, K Kim, G Kim, S Lee, T Uemura, ... IEEE International Electron Devices Meeting (IEDM), 2016 | 33 | 2016 |
| Investigation of Logic Circuit Soft Error Rate (SER) in 14nm FinFET Technology T Uemura, S Lee, S Pae, H Lee IEEE International Reliability Physics Symposium (IRPS), 2016 | 24 | 2016 |
| Enhanced Reliability of 7-nm Process Technology Featuring EUV K Choi, HC Sagong, W Kang, H Kim, J Hai, M Lee, B Kim, M Lee, S Lee, ... IEEE Transactions on Electron Devices 66 (12), 5399 - 5403, 2019 | 19 | 2019 |
| Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology Y Ji, HJ Goo, J Lim, SB Lee, S Lee, T Uemura, JC Park, SI Han, SC Shin, ... IEEE International Reliability Physics Symposium, 2019 | 16 | 2019 |
| Memory Reliability Model for Accumulated and Clustered Soft Errors S Lee, S Baeg, P Reviriego Nuclear Science, IEEE Transactions on 58 (5), 2483 - 2492, 2011 | 16 | 2011 |
| Investigation of alpha-induced single event transient (SET) in 10 nm FinFET logic circuit T Uemura, S Lee, D Min, I Moon, J Lim, S Lee, HC Sagong, S Pae IEEE International Reliability Physics Symposium (IRPS), 2018 | 15 | 2018 |
| An efficient multiple cell upsets tolerant content-addressable memory SM Abbas, S Lee, S Baeg, S Park IEEE Transactions on Computers 63 (8), 2094-2098, 2013 | 15 | 2013 |
| Charge collection modeling for SER simulation in FinFETs U Monga, J Choi, J Jeon, U Kwon, KH Lee, S Choo, T Uemura, S Lee, ... Simulation of Semiconductor Processes and Devices (SISPAD), 2016 | 12 | 2016 |
| Experimental study on BTI variation impacts in SRAM based on high-k/metal gate FinFET: From transistor level Vth mismatch, cell level SNM to product level Vmin C Liu, H Nam, K Kim, S Choo, H Kim, H Kim, Y Kim, S Lee, S Yoon, J Kim, ... IEEE International Electron Devices Meeting (IEDM), 11.3.1-11.3.4, 2015 | 10 | 2015 |
| Novel error detection scheme with the harmonious use of parity codes, well-taps, and interleaving distance SH Jeon, S Lee, S Baeg, I Kim, G Kim IEEE Transactions on Nuclear Science 61 (5), 2711-2717, 2014 | 10 | 2014 |
| Memory reliability analysis for multiple block effect of soft errors S Lee, SH Jeon, S Baeg, D Lee IEEE Transactions on Nuclear Science 60 (2), 1384-1389, 2013 | 10 | 2013 |
| Investigation of Logic Soft Error and Scaling Effect in 10 nm FinFET Technology T Uemura, S Lee, GR Kim, S Pae Reliability Physics Symposium (IRPS), 2017 IEEE International, 2017 | 9 | 2017 |
| Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams GY Bak, S Lee, H Lee, KB Park, S Baeg, SJ Wen, R Wong, C Slayman 2015 IEEE International Reliability Physics Symposium, SE. 3.1-SE. 3.5, 2015 | 8 | 2015 |
| SEIFF: Soft Error Immune Flip-Flop for Mitigating Single Event Upset and Single Event Transient in 10 nm FinFET T Uemura, S Lee, D Min, I Moon, S Lee, S Pae IEEE International Reliability Physics Symposium, 2019 | 7 | 2019 |
| An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation SA Khan, C Lim, G Bak, S Baeg, S Lee Microelectronics Reliability, 2016 | 5 | 2016 |
| Soft Error Issues with Scaling Technologies S Baeg, J Bae, S Lee, CS Lim, SH Jeon, H Nam The 21st Asian Test Symposium (ATS'12), 19-22, 2012 | 5 | 2012 |
| Soft Error Rate Analysis for Incident Angle and N-well Structure Dependencies using Small-sized Alpha Source in 10nm FinFET Technology S Lee, T Uemura, U Monga, JH Choi, GR Kim, S Pae Reliability Physics Symposium (IRPS), 2017 IEEE International, 2017 | 4 | 2017 |
| Comparative study of MC-50 and ANITA neutron beams by using 55 nm SRAM S Baeg, S Lee, GY Bak, H Jeong, SH Jeon Journal of the Korean Physical Society 61 (5), 749-753, 2012 | 3 | 2012 |
