Arash Pourhashemi
Arash Pourhashemi
University of California Santa Barbara
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Year
High-modulation-efficiency, integrated waveguide modulator–laser diode at 448 nm
C Shen, TK Ng, JT Leonard, A Pourhashemi, HM Oubei, MS Alias, ...
ACS Photonics 3 (2), 262-268, 2016
662016
High-power blue laser diodes with indium tin oxide cladding on semipolar GaN substrates
A Pourhashemi, RM Farrell, DA Cohen, JS Speck, SP DenBaars, ...
Applied Physics Letters 106 (11), 111105, 2015
552015
High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications
C Shen, TK Ng, JT Leonard, A Pourhashemi, S Nakamura, SP DenBaars, ...
Optics Letters 41 (11), 2608-2611, 2016
532016
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar GaN substrates
A Pourhashemi, RM Farrell, MT Hardy, PS Hsu, KM Kelchner, JS Speck, ...
Applied Physics Letters 103 (15), 151112, 2013
462013
Optimization of NDE characterization parameters for a RF-SQUID based system using FEM analysis
M Fardmanesh, F Sarreshtedari, A Pourhashemi, E Ansari, MA Vesaghi, ...
IEEE Transactions on applied Superconductivity 19 (3), 791-795, 2009
212009
Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar III-nitride laser diodes with chemically assisted ion …
DL Becerra, LY Kuritzky, J Nedy, A Saud Abbas, A Pourhashemi, ...
Applied Physics Letters 108 (9), 091106, 2016
202016
Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture
L Megalini, DL Becerra, RM Farrell, A Pourhashemi, JS Speck, ...
Applied Physics Express 8 (4), 042701, 2015
162015
CW operation of high‐power blue laser diodes with polished facets on semi‐polar GaN substrates
A Pourhashemi, RM Farrell, DA Cohen, DL Becerra, SP DenBaars, ...
Electronics Letters 52 (24), 2003-2005, 2016
82016
An efficient finite-element approach for the modeling of planar double-D excitation coils and flaws in SQUID NDE systems
F Sarreshtedari, A Pourhashemi, N Asad, J Schubert, M Banzet, ...
IEEE transactions on applied superconductivity 20 (2), 76-81, 2010
52010
2D Analysis of the Effects of Geometry on the Response of High- Superconductive Bolometric Detectors
M Fardmanesh, A Kokabi, A Pourhashemi, A Moftakharzadeh, ...
IEEE transactions on applied superconductivity 19 (3), 484-488, 2009
42009
High power blue-violet III-nitride semipolar laser diodes
A Pourhashemi, RM Farrell, SP DenBaars, JS Speck, S Nakamura
US Patent 9,356,431, 2016
32016
Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate
C Shen, J Leonard, A Pourhashemi, H Oubei, MS Alias, TK Ng, ...
2015 IEEE Photonics Conference (IPC), 581-582, 2015
32015
FEM enhanced signal processing approach for pattern recognition in the SQUID based NDE system
F Sarreshtedari, NMS Jahed, N Hosseni, A Pourhashemi, M Fardmanesh
Journal of Physics: Conference Series 234 (4), 042030, 2010
22010
Measurement of internal loss, injection efficiency, and gain for continuous-wave semipolar (202̄1̄) III-nitride laser diodes
D Becerra, L Kuritzky, J Nedy, A Abbas, A Pourhashemi, R Farrell, ...
2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016
2016
Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 (2) over-bar (1) over-bar III-nitride laser diodes with chemically …
DL Becerra, LY Kuritzky, J Nedy, AS Abbas, A Pourhashemi, RM Farrell, ...
APPLIED PHYSICS LETTERS 108 (9), 2016
2016
Implementation of a SQUID-Based NDE System for Detection of Hidden Cracks and Comparison with an Efficient Proposed FEM Algorithm
F Sarreshtedari, A Pourhashemi, Y Khatami, M Alavi, M Vesaghi, ...
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Articles 1–16