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Jordan R. Lang
Jordan R. Lang
Staff Scientist, Solar Junction
Verified email at sj-solar.com
Title
Cited by
Cited by
Year
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
RM Farrell, CJ Neufeld, SC Cruz, JR Lang, M Iza, S Keller, S Nakamura, ...
Applied Physics Letters 98 (20), 2011
1532011
Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy
DA Browne, EC Young, JR Lang, CA Hurni, JS Speck
Journal of Vacuum Science & Technology A 30 (4), 2012
1102012
Comparison of GaAsP solar cells on GaP and GaP/Si
JR Lang, J Faucher, S Tomasulo, K Nay Yaung, M Larry Lee
Applied Physics Letters 103 (9), 2013
992013
Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
JR Lang, NG Young, RM Farrell, YR Wu, JS Speck
Applied Physics Letters 101 (18), 2012
982012
GaAsP solar cells on GaP/Si with low threading dislocation density
KN Yaung, M Vaisman, J Lang, ML Lee
Applied Physics Letters 109 (3), 2016
902016
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
CJ Neufeld, SC Cruz, RM Farrell, M Iza, JR Lang, S Keller, S Nakamura, ...
Applied Physics Letters 98 (24), 2011
902011
High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy
JR Lang, CJ Neufeld, CA Hurni, SC Cruz, E Matioli, UK Mishra, JS Speck
Applied Physics Letters 98, 131115, 2011
842011
pn junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
CA Hurni, O Bierwagen, JR Lang, BM McSkimming, CS Gallinat, ...
Applied Physics Letters 97 (22), 222113, 2010
582010
Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy
CA Hurni, JR Lang, PG Burke, JS Speck
Applied Physics Letters 101 (10), 2012
392012
Towards high efficiency GaAsP solar cells on (001) GaP/Si
KN Yaung, JR Lang, ML Lee
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 0831-0835, 2014
342014
Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy
T Masuda, S Tomasulo, JR Lang, ML Lee
Journal of Applied Physics 117 (9), 2015
302015
NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy
JR Lang, JS Speck
Journal of Crystal Growth 346, 50-55, 2012
252012
Advances in dilute nitride multi-junction solar cells for space power applications
F Suarez, T Liu, A Sukiasyan, J Lang, E Pickett, E Lucow, T Bilir, S Chary, ...
E3S Web of Conferences 16, 03006, 2017
242017
Defect selective etching of GaAsyP1− y photovoltaic materials
KN Yaung, S Tomasulo, JR Lang, J Faucher, ML Lee
Journal of crystal growth 404, 140-145, 2014
152014
Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy
M Vaisman, S Tomasulo, T Masuda, JR Lang, J Faucher, ML Lee
Applied Physics Letters 106 (6), 2015
132015
High efficiency multijunction photovoltaic cells
F Suarez, T Liu, HB Yuen, DT Bilir, A Sukiasyan, J Lang
US Patent App. 14/887,021, 2017
92017
Optimization of annealing process for improved InGaN solar cell performance
NC Das, ML Reed, AV Sampath, H Shen, M Wraback, RM Farrell, M Iza, ...
Journal of electronic materials 42, 3467-3470, 2013
82013
InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs
RM Farrell, DJ Friedman, NG Young, EE Perl, N Singh, JR Lang, ...
CLEO: Applications and Technology, ATh4N. 4, 2013
72013
Molecular beam epitaxy of nitrides for advanced electronic materials
G Koblmüller, JR Lang, EC Young, JS Speck
Handbook of Crystal Growth, 705-754, 2015
62015
2.19 eV InGaP solar cells on GaP substrates
S Tomasulo, J Faucher, JR Lang, KN Yaung, ML Lee
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 3324-3328, 2013
52013
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Articles 1–20